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- Optimizing Silicon MOSFET Performance in High-Frequency DC-DC Converters
Optimizing Silicon MOSFET Performance in High-Frequency DC-DC Converters
Explore MOSFET tradeoffs in high-frequency DC-DC converters through 65W HFQR and 204W quarter-brick designs
As DC-DC converters move toward higher switching frequencies and greater power density, MOSFET selection requires engineers to balance conduction loss, switching loss, gate-drive requirements, capacitance, and reverse-recovery behavior.
This session examines the application of SuperQ silicon MOSFETs in high-frequency DC-DC power conversion using measured results from a 65 W high-frequency quasi-resonant converter and a 204 W quarter-brick converter. These design examples will illustrate how device characteristics influence converter efficiency and performance under different operating conditions.
The presentation is intended to give power engineers a system-level approach to evaluating MOSFETs for compact, efficient, high-frequency DC-DC converters.
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About
Orion Kress-Sanfilippo is a Systems and Applications Engineer at iDEAL Semiconductor, developing advanced silicon power devices for high-efficiency power conversion systems. He supports customers in evaluating and implementing next-generation MOSFET technologies across motor drives, battery management systems, and high-performance power architectures. His work bridges device-level innovation with system performance to optimize efficiency, thermal management, and overall system cost.
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David Jauregui
Founder & Chief Technology Officer
David Jauregui is Co-Founder and CTO of iDEAL Semiconductor, leading the development of advanced silicon power MOSFET technologies, including the SuperQ architecture. He brings over 30 years of experience in device architecture and power management IC design. Previously, he held senior technical and business leadership roles at Texas Instruments, Ciclon Semiconductor, and International Rectifier.
