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iDEAL Semiconductor

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AN001: Refining Switching Charge Interval for Power Loss

A revised switching-charge interval more accurately predicts real-world switching losses in modern RESURF MOSFETs than traditional QSW definitions.

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Rethinking Synchronous Rectifiers for Higher-Efficiency QR Flyback Converters

Testing a 65W USB-C design shows that SuperQ® improves efficiency, reduces power loss, accelerates primary-side transitions, and lowers primary-stage temperature by more than 20°C.

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SuperQ® Technology: Reinventing Silicon at the Atomic Level

SuperQ redefines silicon power MOSFETs with an advanced RESURF architecture. By increasing silicon utilization up to 95%, it delivers lower losses, ruggedness, and optimized cost-performance.

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